Top-illuminated dye-sensitized solar cells with a room-temperature-processed ZnO photoanode on metal substrates and a Pt-coated Ga-doped ZnO counter electrode
Identifieur interne : 000658 ( Chine/Analysis ); précédent : 000657; suivant : 000659Top-illuminated dye-sensitized solar cells with a room-temperature-processed ZnO photoanode on metal substrates and a Pt-coated Ga-doped ZnO counter electrode
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Abstract
We report on top-illuminated, fluorine tin oxide/indium tin oxide-free (FTO/ITO-free), dye-sensitized solar cells (DSCs) using room-temperature-processed ZnO layers on metal substrates as the working electrodes and Pt-coated Ga-doped ZnO layers (GZO) as the counter electrodes. These top-illuminated DSCs with GZO render comparable efficiency to those employing commercial FTO counter electrodes. Despite a lower current density, the top-illuminated DSCs result in a higher fill factor than conventional DSCs due to a low ohmic loss at the electrode/semiconductor interface. The effect of metal substrate on the performance of the resulting top-illuminated DSCs is also studied by employing various metals with different work functions. Ti is shown to be a suitable metal to be used as the working electrode in the top-illuminated device architecture owing to its low ohmic loss at the electrode/semiconductor interface, minimum catalytic activity on redox reactions and high resistance to corrosion by liquid electrolytes.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Top-illuminated dye-sensitized solar cells with a room-temperature-processed ZnO photoanode on metal substrates and a Pt-coated Ga-doped ZnO counter electrode</title><author><name sortKey="Kyaw, A K K" uniqKey="Kyaw A">A. K. K. Kyaw</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue</s1><s2>Singapore 639798</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 639798</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Physical and Mathematical Science, Nanyang Technological University, 21 Nanyang Link</s1><s2>Singapore 637371</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 637371</wicri:noRegion></affiliation></author><author><name sortKey="Sun, X W" uniqKey="Sun X">X. W. Sun</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue</s1><s2>Singapore 639798</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 639798</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Applied Physics, Tianjin University</s1><s2>Tianjin 300072</s2><s3>CHN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin 300072</wicri:noRegion></affiliation></author><author><name sortKey="Zhao, J L" uniqKey="Zhao J">J. L. Zhao</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue</s1><s2>Singapore 639798</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 639798</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Applied Physics, Tianjin University</s1><s2>Tianjin 300072</s2><s3>CHN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin 300072</wicri:noRegion></affiliation></author><author><name sortKey="Wang, J X" uniqKey="Wang J">J. X. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue</s1><s2>Singapore 639798</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 639798</wicri:noRegion></affiliation></author><author><name sortKey="Zhao, D W" uniqKey="Zhao D">D. W. Zhao</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue</s1><s2>Singapore 639798</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 639798</wicri:noRegion></affiliation></author><author><name sortKey="Wei, X F" uniqKey="Wei X">X. F. Wei</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Physical and Mathematical Science, Nanyang Technological University, 21 Nanyang Link</s1><s2>Singapore 637371</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 637371</wicri:noRegion></affiliation></author><author><name sortKey="Liu, X W" uniqKey="Liu X">X. W. Liu</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Physical and Mathematical Science, Nanyang Technological University, 21 Nanyang Link</s1><s2>Singapore 637371</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 637371</wicri:noRegion></affiliation></author><author><name sortKey="Demir, H V" uniqKey="Demir H">H. V. Demir</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue</s1><s2>Singapore 639798</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 639798</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Physical and Mathematical Science, Nanyang Technological University, 21 Nanyang Link</s1><s2>Singapore 637371</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 637371</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Electrical and Electronic Engineering and Department of Physics, Bilkent University, Bilkent</s1><s2>06800 Ankara</s2><s3>TUR</s3><sZ>8 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>06800 Ankara</wicri:noRegion></affiliation></author><author><name sortKey="Wu, T" uniqKey="Wu T">T. Wu</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Physical and Mathematical Science, Nanyang Technological University, 21 Nanyang Link</s1><s2>Singapore 637371</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 637371</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0126887</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0126887 INIST</idno><idno type="RBID">Pascal:11-0126887</idno><idno type="wicri:Area/Main/Corpus">003540</idno><idno type="wicri:Area/Main/Repository">002233</idno><idno type="wicri:Area/Chine/Extraction">000658</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-3727</idno><title level="j" type="abbreviated">J. phys., D. Appl. phys. : (Print)</title><title level="j" type="main">Journal of physics. D, Applied physics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectrum</term><term>Coatings</term><term>Current density</term><term>Differential scanning calorimetry</term><term>Dye-sensitized solar cell</term><term>Gallium addition</term><term>Illumination</term><term>Platinum</term><term>Semiconductor materials</term><term>Transition metal</term><term>Voltage current curve</term><term>Work function</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Eclairement</term><term>Revêtement</term><term>Addition gallium</term><term>Calorimétrie différentielle balayage</term><term>Spectre absorption</term><term>Travail sortie</term><term>Caractéristique courant tension</term><term>Densité courant</term><term>Cellule solaire à colorant</term><term>Oxyde de zinc</term><term>Platine</term><term>Semiconducteur</term><term>Métal transition</term><term>ZnO</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Platine</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on top-illuminated, fluorine tin oxide/indium tin oxide-free (FTO/ITO-free), dye-sensitized solar cells (DSCs) using room-temperature-processed ZnO layers on metal substrates as the working electrodes and Pt-coated Ga-doped ZnO layers (GZO) as the counter electrodes. These top-illuminated DSCs with GZO render comparable efficiency to those employing commercial FTO counter electrodes. Despite a lower current density, the top-illuminated DSCs result in a higher fill factor than conventional DSCs due to a low ohmic loss at the electrode/semiconductor interface. The effect of metal substrate on the performance of the resulting top-illuminated DSCs is also studied by employing various metals with different work functions. Ti is shown to be a suitable metal to be used as the working electrode in the top-illuminated device architecture owing to its low ohmic loss at the electrode/semiconductor interface, minimum catalytic activity on redox reactions and high resistance to corrosion by liquid electrolytes.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-3727</s0></fA01><fA02 i1="01"><s0>JPAPBE</s0></fA02><fA03 i2="1"><s0>J. phys., D. Appl. phys. : (Print)</s0></fA03><fA05><s2>44</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Top-illuminated dye-sensitized solar cells with a room-temperature-processed ZnO photoanode on metal substrates and a Pt-coated Ga-doped ZnO counter electrode</s1></fA08><fA11 i1="01" i2="1"><s1>KYAW (A. K. K.)</s1></fA11><fA11 i1="02" i2="1"><s1>SUN (X. W.)</s1></fA11><fA11 i1="03" i2="1"><s1>ZHAO (J. L.)</s1></fA11><fA11 i1="04" i2="1"><s1>WANG (J. X.)</s1></fA11><fA11 i1="05" i2="1"><s1>ZHAO (D. W.)</s1></fA11><fA11 i1="06" i2="1"><s1>WEI (X. F.)</s1></fA11><fA11 i1="07" i2="1"><s1>LIU (X. W.)</s1></fA11><fA11 i1="08" i2="1"><s1>DEMIR (H. V.)</s1></fA11><fA11 i1="09" i2="1"><s1>WU (T.)</s1></fA11><fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue</s1><s2>Singapore 639798</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>School of Physical and Mathematical Science, Nanyang Technological University, 21 Nanyang Link</s1><s2>Singapore 637371</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Applied Physics, Tianjin University</s1><s2>Tianjin 300072</s2><s3>CHN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Electrical and Electronic Engineering and Department of Physics, Bilkent University, Bilkent</s1><s2>06800 Ankara</s2><s3>TUR</s3><sZ>8 aut.</sZ></fA14><fA20><s2>045102.1-045102.8</s2></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>5841</s2><s5>354000194319240070</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>36 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0126887</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of physics. D, Applied physics : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>We report on top-illuminated, fluorine tin oxide/indium tin oxide-free (FTO/ITO-free), dye-sensitized solar cells (DSCs) using room-temperature-processed ZnO layers on metal substrates as the working electrodes and Pt-coated Ga-doped ZnO layers (GZO) as the counter electrodes. These top-illuminated DSCs with GZO render comparable efficiency to those employing commercial FTO counter electrodes. Despite a lower current density, the top-illuminated DSCs result in a higher fill factor than conventional DSCs due to a low ohmic loss at the electrode/semiconductor interface. The effect of metal substrate on the performance of the resulting top-illuminated DSCs is also studied by employing various metals with different work functions. Ti is shown to be a suitable metal to be used as the working electrode in the top-illuminated device architecture owing to its low ohmic loss at the electrode/semiconductor interface, minimum catalytic activity on redox reactions and high resistance to corrosion by liquid electrolytes.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Eclairement</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Illumination</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Alumbrado</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Revêtement</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Coatings</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Revestimiento</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Addition gallium</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Gallium addition</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Adición galio</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Calorimétrie différentielle balayage</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Differential scanning calorimetry</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Análisis calorimétrico barrido exploración</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Spectre absorption</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Absorption spectrum</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Espectro de absorción</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Travail sortie</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Work function</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Función de trabajo</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Caractéristique courant tension</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Voltage current curve</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Característica corriente tensión</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Densité courant</s0><s5>11</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Current density</s0><s5>11</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Densidad corriente</s0><s5>11</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Cellule solaire à colorant</s0><s5>15</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Dye-sensitized solar cell</s0><s5>15</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Célula solar sensibilizada tinte</s0><s5>15</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Oxyde de zinc</s0><s5>16</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Zinc oxide</s0><s5>16</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Zinc óxido</s0><s5>16</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Platine</s0><s2>NC</s2><s5>17</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Platinum</s0><s2>NC</s2><s5>17</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Platino</s0><s2>NC</s2><s5>17</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Semiconducteur</s0><s5>19</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Semiconductor materials</s0><s5>19</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Semiconductor(material)</s0><s5>19</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Métal transition</s0><s2>NC</s2><s5>48</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Transition metal</s0><s2>NC</s2><s5>48</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Metal transición</s0><s2>NC</s2><s5>48</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>ZnO</s0><s4>INC</s4><s5>52</s5></fC03><fN21><s1>080</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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